unisonic technologies co., ltd 7n70 power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2011 unisonic technologies co., ltd qw-r502-103,b 7 amps, 700 volts n-channel power mosfet ? description the utc 7n70 is a high voltage mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. this power mosfet is usually used at high speed switching applications in power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) = 1.5 ? @v gs = 10 v * ultra low gate charge ( typical 30 nc ) * low reverse transfer capacitance ( c rss = typical 18 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain ? ordering information order number pin assignment lead free halogen free package 1 2 3 packing 7n70l-tf3-t 7n70g-tf3-t to-220f g d s tube 7N70L-TF1-T 7n70g-tf1-t to-220f1 g d s tube
7n70 power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-103,b ? absolute maximum ratings (t c = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 700 v gate-source voltage v gss 30 v t c = 25c 7.0 a continuous drain current t c = 100c i d 4.7 a drain current pulsed (note 1) i dm 28 a avalanche energy, single pulsed (note 2) e as 530 mj avalanche energy, repetitive, limited by t jmax e ar 14.2 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns to-220f 142 w power dissipation (t c = 25c) to-220f1 p d 48 w junction temperature t j +150 storage temperature t stg -55 ~ +150 note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. ? thermal data parameter symbol ratings unit to-220f 62.5 c/w junction to ambient to-220f1 ja 62.5 c/w to-220f 0.88 c/w junction to case to-220f1 jc 2.6 c/w ? electrical characteristics (t c =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 700 v v ds = 700 v, v gs = 0 v 1 a drain-source leakage current i dss v ds = 560 v, t c = 125c 1 a forward v gs = 30 v, v ds = 0 v 100 na gate-source leakage current reverse i gss v gs = -30 v, v ds = 0 v -100 na breakdown voltage temperature coefficient bv dss / t j i d = 250 a, referenced to 25c 0.67 v/ on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v drain-source on-state resistance r ds(on) v gs = 10 v, i d = 3.5 a 1.35 1.5 ? forward transconductance g fs v ds = 40 v, i d = 3.5 a (note 4) 8.0 s dynamic characteristics input capacitance c iss 1200 1600 pf output capacitance c oss 150 190 pf reverse transfer capacitance c rss v ds = 25 v, v gs = 0 v, f = 1mhz 18 25 pf switching characteristics turn-on delay time t d(on) 35 80 ns turn-on rise time t r 79 165 ns turn-off delay time t d(off) 80 160 ns turn-off fall time t f v dd = 350v, i d = 7.0 a (note 4, 5) 52 120 ns total gate charge q g 30 nc gate-source charge q gs 6.5 nc gate-drain charge q dd v ds = 560v, i d = 7.0a, v gs = 10 v (note 4, 5) 13 nc
7n70 power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-103,b ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0 v, i s =7.0 a 1.4 v maximum continuous drain-source diode forward current i s 7.0 a maximum pulsed drain-source diode forward current i sm 28 a reverse recovery time t rr 320 ns reverse recovery charge q rr v gs = 0 v, i s = 7.0 a, di f /dt = 100 a/ s (note 4) 2.4 c notes: 1. repetitive rati ng : pulse width limited by t j 2. l = 19.5mh, i as = 7.0a, v dd = 50v, r g = 0 ? , starting t j = 25c 3. i sd 7.0a, di/dt 100a/ s, v dd bv dss , starting t j = 25c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature
7n70 power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-103,b ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period fig. 1a peak diode recovery dv/dt test circuit fig. 1b peak diode recovery dv/dt waveforms
7n70 power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-103,b ? test circuits and waveforms (cont.) fig. 2a switching test circuit fig. 2b switching waveforms fig. 3a gate charge test circuit fig. 3b gate charge waveform fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
7n70 power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-103,b ? typical characteristics drain-source breakdown voltage, bv dss (normalized) drain-source on-resistance, r ds(on) (normalized) 10 1 0.1 drain-source voltage, v ds (v) 100 10 1 100s 1000 10ms 1ms dc operation in this area is limited by r ds(on) maximum safe operating area case temperature, t c ( ) 75 100 0 125 50 25 2 4 6 8 maximum drain current vs. case temperature notes: 1. t j =25 2. t j =150 3. single pulse 150
7n70 power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-103,b ? typical characteristics(cont.) 0 0 drain current, i d (a) 510 v gs =20v 0.5 1.0 2.0 2.5 on-resistance variation vs. drain current and gate voltage 1.5 15 20 25 note: t j =25 v gs =10v 1 0.1 0.2 source-drain voltage, v sd (v) on state current vs. allowable case temperature 1.8 0.4 0.6 0.8 1.0 1.2 1.6 1.4 10 150 25 notes: 1. v gs =0v 2. 250s test
7n70 power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-103,b utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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